Related Experiment Video
Updated: May 23, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
Published on: November 5, 2014
Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor
Li Ding1, Zhiyong Zhang, Tian Pei
1Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
Abstract:
The use of carbon nanotube (CNT)-based field-effect transistors (FETs) as pass transistors is investigated. Logic gates are designed and constructed with these CNT FETs in the pass-transistor logic (PTL) style. Because two of the three terminals of every CNT FET are used as inputs, the efficiency per transistor in PTL circuits is significantly improved. With the PTL style, a single pair of FETS, one n-type and one p-type, is sufficient to construct high-performance AND or OR gates in which the measured output voltages are consistent with those quantitatively derived using the characteristics of the pair of the constituent n- and p-FETs. A one-bit full subtractor, which requires a total of 28 FETs to construct in the usual CMOS circuit, is realized on individual CNTs for the first time using the PTL style with only three pairs of n- and p-FETs.
Related Concept Videos
Field Effect Transistor
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Bipolar Junction Transistor
The structure...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

