Growth and electronic structure of Sm on thin Al2O3/Ni3Al(111) films

The growth and electronic structure of vapor-deposited Sm on a well-ordered Al(2)O(3)/Ni(3)Al(111) ultrathin film under ultrahigh vacuum conditions at room temperature have been studied comprehensively using synchrotron radiation photoemission spectroscopy, X-ray photoelectron spectroscopy, work function measurements, scanning tunneling microscopy, and low-energy electron diffraction. Our results indicate that at room temperature Sm grows in a layer-by-layer fashion up to at least 1 ML, followed by three-dimensional growth. The interaction of Sm with Al(2)O(3) thin films leads to an initial oxidation of Sm, accompanied by a parallel reduction of the Al(2)O(3) substrate. Both the oxidation states of Sm(2+) and Sm(3+) are found at low coverage (<1 ML). The concentration of Sm(2+) saturates below 0.4 ML, while that of Sm(3+) keeps increasing until the metallic state of Sm appears at high coverages.