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Preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films
Zhiwen Chen1, Zheng Jiao, Minghong Wu
1Shanghai Applied Radiation Institute, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, People's Republic of China.
Journal of Nanoscience and Nanotechnology
|April 25, 2012
Summary
This review explores metal/semiconductor thin films, focusing on gold/germanium (Au/Ge) and palladium/germanium (Pd-Ge) alloys. Understanding their fractal and nanocrystal structures is key for advanced microelectronic devices.
Area of Science:
- Materials Science
- Nanoscience and Nanotechnology
Background:
- Metal/semiconductor thin films are crucial for microelectronic devices.
- Assessing fractal and nanostructures is vital for nano/microdevice development.
Purpose of the Study:
- To review preparation methodologies and nano/microstructural evaluation of Au/Ge and Pd-Ge thin films.
- To highlight the fractal and nanocrystal characteristics of these films.
Main Methods:
- Detailed description of Au/Ge thin film preparation for fractal crystallization and nanocrystal formation.
- Investigation of Pd-Ge alloy thin film nano/microstructural evolution during annealing.
Main Results:
- Au/Ge thin films exhibit fractal crystallization and nanocrystal formation with enhanced features.
- Pd-Ge alloy thin films show distinct nano/microstructural characteristics upon annealing.
Conclusions:
- Developed preparation methods and understanding of nano/microstructural evolution provide a basis for future research.
- These findings offer opportunities for advanced technological applications in physics, chemistry, and materials science.
