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Updated: May 22, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Enhanced performance of short-channel carbon nanotube field-effect transistors due to gate-modulated electrical
Aron W Cummings1, François Léonard
1Sandia National Laboratories, MS9161, Livermore, California 94551, USA. awcummi@sandia.gov
Abstract:
We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is distinct from that observed in Schottky barrier carbon nanotube transistors. This modulation of the contacts by the gate allows for the realization of superior subthreshold swings for short channels, and improved scaling behavior. These results further elucidate the behavior of carbon nanotube-metal contacts, and should be useful in the optimization of high-performance carbon nanotube electronics.
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