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Updated: May 22, 2026

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing
Published on: March 22, 2019
310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection
Ning Duan1, Tsung-Yang Liow, Andy Eu-Jin Lim
1Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore. duann@ime.a-star.edu.sg
Abstract:
We report a normal incidence Ge/Si avalanche photodiode with separate-absorption-charge-multiplication (SACM) structure by selective epitaxial growth. By proper design of charge and multiplication layers and by optimizing the electric field distribution in the depletion region to eliminate germanium impact-ionization at high gain, a high responsivity of 12 A/W and a large gain-bandwidth product of 310 GHz have been achieved at 1550 nm.

