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Updated: May 22, 2026
Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices:
Jr-Hau He1, Jr-Jian Ke, Pei-Hsin Chang
1Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei, 10617 Taiwan, ROC. jhhe@cc.ee.ntu.edu.tw
Abstract:
We demonstrated a nanocontacting scheme using a focus ion beam (FIB) system without further heat treatment for ZnO nanowires. This scheme includes Ga ion surface modification and direct-write Pt deposition induced by Ga ion, leading to an Ohmic nanocontact with a specific contact resistance as low as 2.5 × 10(-6)Ω cm(2). Temperature-dependent measurements show that the transport of the FIB-Pt contact on the ZnO nanowire with local surface modification is governed by field emission tunneling. Taking advantage of area-selected and room-temperature processes, Ga ion surface modification and direct-write Pt deposition using a FIB system demonstrates a feasible Ohmic scheme.
