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Updated: Oct 10, 2026

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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Correction and removal of expression of concern: A hysteresis-free perovskite transistor with exceptional stability
Hyeong Pil Kim1, Maria Vasilopoulou2, Habib Ullah3
1Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701, South Korea.
Nanoscale
|October 9, 2026
Abstract:
Correction and removal of expression of concern for 'A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation' by Hyeong Pil Kim et al., Nanoscale, 2020, 12, 7641-7650, https://doi.org/10.1039/C9NR10745B.
