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Ultrabroadband supercontinuum generation in a CMOS-compatible platform
R Halir1, Y Okawachi, J S Levy
1Departamento Ingeniería de Comunicaciones, ETSI Telecomunicación, Universidad de Málaga, Málaga, Spain. robert.halir@ic.uma.es
Optics Letters
|May 26, 2012
Summary
We achieved broadband supercontinuum generation in silicon nitride waveguides, creating a wide optical spectrum. This breakthrough offers a compact and affordable light source for various advanced technologies.
Area of Science:
- Photonics and Optical Engineering
- Materials Science
Background:
- Supercontinuum generation is crucial for many optical applications.
- Silicon nitride (SiN) waveguides offer high nonlinearity and low loss, making them promising for integrated photonics.
Purpose of the Study:
- To demonstrate supercontinuum generation over a broad spectral range using silicon nitride waveguides.
- To assess the potential of this technology for practical applications.
Main Methods:
- Utilizing a 4.3 cm-long silicon nitride waveguide.
- Employing 160 pJ optical pulses with an effective nonlinearity of γ=1.2 W⁻¹m⁻¹.
Main Results:
- Achieved supercontinuum generation spanning 1.6 octaves.
- Generated a spectrum from 665 nm to 2025 nm (at -30 dB).
Conclusions:
- The developed silicon nitride waveguide is a robust, integrated, and low-cost supercontinuum source.
- Potential applications include frequency metrology, optical coherence tomography, confocal microscopy, and optical communications.
