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Microstructure and electrical property of TiNx films deposited by DC reactive magnetron sputtering superimposed
Ji Bong Park1, Jung Hyuk Kim, Sang Hyun Cho
1Department of Materials Science and Engineering, Pusan National University, Busan 609-735, Korea.
Abstract:
TiNx films were successfully deposited by DC reactive magnetron sputtering superimposed EMF system without substrate heating. In case of DCMS 400 W+ EMF 25 W, electrical property, reflectance and crystallinity of the TiN films were clearly improved by the enhancement of nitrification. The lowest sheet resistance of 2.9 Ω/⟂ (resistivity 5.8 x 10(-5) Ωcm) was observed for the film deposited at F(N)2: 16%. Mixture phases of the (111) plane and (200) plane showed lower resistivity than only (200) single phase. Therefore it is confirmed that introduction of EMF system is promising technology to deposit TiN film.
