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Selective area atomic layer deposited ZnO nanodot on self-assembled monolayer pattern using a diblock copolymer
Doyoung Kim1, Jaehong Yoon, Hyungjun Kim
1School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-784, Korea.
Abstract:
ZnO nanodots were prepared by selective area atomic layer deposition (SA-ALD) on an octadecyltrichlorosilane (ODTS) self-assembly monolayers (SAMs) patterns formed using a diblock co-polymer (DBC) nanotemplate. In order to transfer well-ordered nanaotemplate in SAMs, SiO2 sacrificial layer was inserted between DBC and SAMs. Cylindrical nanoholes under 16 nm diameters were well-formed on SiO2 layer. SA-ALD of ZnO was successfully performed on by ODTS SAMs.
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