Chemical control of semiconductor nanowire kinking and superstructure

We show that methylgermane (GeH(3)CH(3)) can induce a transition from 111 to 110 oriented growth during the vapor-liquid-solid synthesis of Ge nanowires. This hydride-based chemistry is subsequently leveraged to rationally fabricate kinking superstructures based on combinations of 111 and 110 segments. The addition of GeH(3)CH(3) also eliminates sidewall tapering and enables Ge nanowire growth at temperatures exceeding 475 °C, which greatly expands the process window and opens new avenues to create Si/Ge heterostructures.