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Updated: May 21, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Resistance switching characteristics of solid electrolyte chalcogenide Ag(2)Se nanoparticles for flexible nonvolatile
Jaewon Jang1, Feng Pan, Kyle Braam
1Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA.
Abstract:
Solution-processed mechanically flexible resistive random access memories are fabricated using Ag(2)Se nanoparticles; the fabricated Ag/Ag(2)Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 10(5) s, and no degradation in endurance after 10(4) switching cycles, with stable operation even under a mechanical strain of 0.38%.
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