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Updated: May 21, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Ultralow drive voltage silicon traveling-wave modulator
Tom Baehr-Jones1, Ran Ding, Yang Liu
1Department of Electrical Engineering, University of Washington, Campus Box 352500, Seattle, Washington 98195, USA. baehrjt@washington.edu
Abstract:
There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit.
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