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Linearity of silicon ring modulators for analog optical links
Ali Ayazi1, Tom Baehr-Jones, Yang Liu
1Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA. ayazi@uw.edu
Optics Express
|June 21, 2012
Summary
This study analyzes nonlinear distortions in silicon ring modulators for analog links. The primary source of nonlinearity is identified as the pn junction, achieving a high spurious-free dynamic range.
Area of Science:
- Photonics
- Semiconductor Devices
- Optical Communications
Background:
- Silicon ring modulators are crucial components in optical communication systems.
- Understanding and mitigating nonlinear distortions is essential for high-performance analog links.
Purpose of the Study:
- To investigate the nonlinear distortions in silicon ring modulators.
- To identify and model the key sources of modulation nonlinearity.
- To optimize modulator performance for analog signal transmission.
Main Methods:
- Modeling of nonlinear effects in silicon ring modulators.
- Analysis of carrier depletion effect.
- Characterization of intermodulation distortion.
Main Results:
- The pn junction is identified as the dominant source of nonlinearity.
- Nonlinear wavelength response of the ring modulator is a less significant factor.
- A spurious-free dynamic range of 84 dB.Hz²/₃ was achieved for intermodulation distortion.
Conclusions:
- The pn junction's nonlinearity is the primary limitation in silicon ring modulators for analog links.
- Effective management of pn junction nonlinearity is key to improving modulator performance.
- The achieved spurious-free dynamic range demonstrates the potential for high-fidelity analog optical links.
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