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MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices.

Alexandros Emboras¹, Adel Najar, Siddharth Nambiar

¹CEA, LETI, Minatec Campus, 17 rue des martyrs, F-38042 Grenoble, France.

|June 21, 2012

Summary

We improved the electrical reliability of Metal-Nitride-Oxide-Silicon (MNOS) devices to 95% by adding a silicon nitride layer. This enhances CMOS-compatible plasmonic devices while maintaining low optical losses with copper gates.

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Area of Science:

Materials Science
Nanotechnology
Photonics

Background:

Metal-Oxide-Semiconductor (MOS) structures are fundamental in electronics.
Plasmonic devices offer potential for high-speed optical communication.
Integrating reliable materials into CMOS processes is crucial for advanced devices.

Purpose of the Study:

To investigate the electro-optical properties of Metal-Nitride-Oxide-Silicon (MNOS) stacks.
To enhance the electrical reliability of MNOS structures for CMOS-compatible plasmonic applications.
To evaluate the impact of a silicon nitride layer on optical losses in copper-gated devices.

Main Methods:

Fabrication of MNOS capacitors and channel waveguides using standard CMOS processes.
Electrical characterization to assess reliability and breakdown fields.

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Optical transmission measurements to determine propagation losses in waveguide structures.

Ellipsometric analysis to obtain optical constants of copper.

Main Results:

Insertion of an ultrathin stoichiometric Si(3)N(4) layer significantly increased electrical reliability from 50% to 95%.
Copper served as an effective plasmon-supporting metal, preserving low optical losses.
Measured optical losses in MNOS channel waveguides were as low as 0.39 dB.μm(-1).
Experimental results align well with optical constant predictions.

Conclusions:

The optimized MNOS stack demonstrates high electrical reliability and low optical losses.
This approach is suitable for developing CMOS-compatible plasmonic active devices.
The silicon nitride layer acts as an effective diffusion barrier, improving device longevity.