Note: ε(T) dependence behavior in GaP diodes at high temperatures.

Area of Science:

• Solid State Physics
• Materials Science
• Semiconductor Physics

Background:

• Understanding the dielectric properties of semiconductor materials is crucial for electronic device performance.
• Gallium Phosphide (GaP) is a wide bandgap semiconductor with potential applications in high-temperature environments.
• The temperature dependence of dielectric constants can significantly impact device characteristics.

Purpose of the Study:

• To investigate the temperature behavior of the static dielectric constant (ε) in the base region of Gallium Phosphide (GaP) diodes.
• To determine the ε(T) function and analyze its characteristics within the 300-575 K temperature range.
• To provide data valuable for the development of high-temperature electronics and thermometry.

Main Methods:

• Capacity-voltage (C-V) characteristics of GaP diodes were measured.
• The static dielectric constant (ε) was extracted from the C-V data.
• The temperature dependence of ε, denoted as ε(T), was analyzed in the range of 300-575 K.

Main Results:

• The static dielectric constant (ε) of GaP diodes exhibits a monotonic temperature dependence.
• A maximum in the ε(T) function was observed in the high-temperature region.
• The observed temperature behavior is attributed to a mixed electron-ion polarization mechanism characteristic of wide bandgap III-V semiconductors.

Conclusions:

• The temperature dependence of the static dielectric constant in GaP diodes has been successfully characterized.
• The findings provide essential data for designing and optimizing GaP-based devices for high-temperature operation.
• The results are beneficial for the advancement of high-temperature electronics and precision thermometry using semiconductor materials.