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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...

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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
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Stable solution-processed molecular n-channel organic field-effect transistors.

Do Kyung Hwang1, Raghunath R Dasari, Mathieu Fenoll

  • 1School of Electrical and Computer Engineering, Center for Organic Photonics and Electronics (COPE), Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA.

Advanced Materials (Deerfield Beach, Fla.)
|July 13, 2012
PubMed
Summary

A novel small molecule for organic electronics was synthesized. This material enables high-performance, stable organic field-effect transistors (OFETs) fabricated using solution-processing techniques.

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Semiconductor Physics

Background:

  • Organic field-effect transistors (OFETs) are crucial for flexible electronics.
  • Developing solution-processable semiconductors is key for low-cost manufacturing.
  • Electron-poor organic molecules are essential for n-channel OFETs.

Purpose of the Study:

  • To synthesize a new solution-processable small molecule for OFET applications.
  • To investigate the performance of OFETs fabricated with this new material.
  • To evaluate the stability and processability of the developed semiconductor.

Main Methods:

  • Synthesis of a small molecule incorporating naphthalene diimide and tetrazine moieties.
  • Fabrication of n-channel organic field-effect transistors (OFETs) via spin-coating and inkjet-printing.
  • Characterization of device performance, including electron mobility and stability.

Main Results:

  • The synthesized small molecule is solution-processable.
  • Spin-coated OFETs on glass achieved electron mobility up to 0.15 cm(2) V(-1) s(-1).
  • Inkjet-printed OFETs on plastic substrates demonstrated electron mobility up to 0.17 cm(2) V(-1) s(-1) with excellent stability.

Conclusions:

  • The new small molecule is a promising candidate for high-performance, solution-processed n-channel OFETs.
  • Inkjet printing offers a viable route for fabricating stable and efficient organic electronic devices on flexible substrates.
  • The developed material exhibits excellent environmental and operational stability, crucial for practical applications.