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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Self-filtering monolithic organic/PbS quantum dot photodetector for visible and short-wave infrared selective vision
Seunghyun Oh1, Byung Ku Jung2, Hyun Woo Ko3,4
1School of Electrical Engineering, Korea University, Seoul, Republic of Korea.
Abstract:
Dual-mode photodetectors with vertically stacked photoactive layers enable bias-controlled, band-selective extraction from their constituent photoactive layers. While their applications ranging from non-invasive diagnostics to optical communication demand high-fidelity detection of faint light, performance is often limited by interlayer-derived structural complexity and noise. Here, we present an interlayer-free monolithic organic/PbS photodetector that achieves visible and short-wave infrared dual-mode operation with low noise and crosstalk. Inducing vertical and lateral phase-separation in the organic layer facilitates charge carrier dynamics that yield high specific detectivity without auxiliary interlayers, enabling simple device structures that detect small signals with high precision. This strategy can be utilized in a variety of photoactive layer combinations spectrally targeted for application-specific devices. Its practicality is demonstrated through single-pixel imaging, which reconstructs high-fidelity images across visible and SWIR bands even under light attenuation. Furthermore, its dual-mode capability enables silicon alignment through registration of front- and back-side features.
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