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Published on: May 13, 2020
Emerging memories: resistive switching mechanisms and current status.
Doo Seok Jeong1, Reji Thomas, R S Katiyar
1Electronic Materials Research Centre, Korea Institute of Science and Technology, Hwarangno 14-gil, Seongbuk-gu, Seoul 136-791, Republic of Korea. dsjeong@kist.re.kr
Summary
Resistive switching materials enable next-generation non-volatile memory (NVM) devices, known as resistive random access memories (RRAMs). This review focuses on promising materials, particularly transition metal oxides, for high-density, low-cost RRAM applications.
Area of Science:
- Materials Science
- Solid-State Electronics
- Semiconductor Physics
Background:
- Resistive switching behavior in various materials is crucial for developing advanced non-volatile memory (NVM) devices.
- Resistive Random Access Memories (RRAMs) utilize materials that alter resistance under applied voltage, offering a potential successor to current semiconductor memory technologies.
- A wide range of materials, including transition metal oxides, complex oxides, dielectrics, graphene oxides, and chalcogenides, exhibit this resistance switching phenomenon.
Purpose of the Study:
- To review the diverse range of materials exhibiting resistive switching behavior for potential RRAM applications.
- To focus on the most promising materials, especially binary transition metal oxides, for accelerating RRAM integration into the semiconductor industry.
- To provide an overview of the current understanding of resistive switching mechanisms and compare RRAMs with memristors.
Main Methods:
- Literature review of materials exhibiting resistive switching.
- Analysis of resistive switching phenomena in various material categories (oxides and non-oxides).
- Comparison of RRAM technology with memristors and assessment of RRAMs' stability, scalability, and switching speed.
Main Results:
- Numerous materials, including binary transition metal oxides (e.g., TiO2, NiO), complex oxides, dielectrics, graphene oxides, and chalcogenides (e.g., In2Se3), demonstrate resistive switching.
- Binary transition metal oxides are highlighted as particularly promising for RRAM development.
- The review provides insights into the fundamental understanding of resistive switching and its implications for future memory technologies.
Conclusions:
- Resistive switching materials are key to realizing next-generation high-density, low-cost RRAM devices.
- Further research and focus on promising materials like binary TMOs are essential for the semiconductor industry's adoption of RRAM.
- RRAMs show potential for surpassing current memory limitations, with ongoing assessments of their stability, scalability, and switching speed crucial for successful integration.
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