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Fabrication of Surface Acoustic Wave Devices on Lithium Niobate
Published on: June 18, 2020
Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography.
S Büyükköse1, B Vratzov, D Ataç
1NanoElectronics Group, MESAC Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands. s.buyukkose@utwente.nl
Ultrahigh-frequency surface acoustic wave devices utilizing zinc oxide (ZnO) on silicon achieved record frequencies up to 16.1 GHz. This advancement was enabled by nanoimprint lithography and advanced substrate preparation techniques.
Area of Science:
- Materials Science
- Electrical Engineering
- Acoustics
Background:
- Surface acoustic wave (SAW) devices are crucial for high-frequency electronics.
- Advancements in fabrication techniques are needed to push operating frequencies higher.
- Zinc oxide (ZnO) is a promising material for piezoelectric SAW devices.
Purpose of the Study:
- To fabricate ultrahigh-frequency SAW devices on a ZnO/SiO₂/Si substrate.
- To achieve excellent critical dimension control for nanoscale interdigital transducers.
- To demonstrate the highest operating frequency for ZnO-based transducers on silicon.
Main Methods:
- Utilized step-and-flash nanoimprint lithography for device fabrication.
- Employed hydrogen silsesquioxane (HSQ) for substrate planarization.
- Excited and detected fundamental and higher-order Rayleigh modes.
Main Results:
- Achieved critical dimension control for interdigital transducers down to 65 nm finger electrode widths.
- Successfully excited and detected Rayleigh modes up to 16.1 GHz.
- Demonstrated the highest frequency for ZnO-based transducers on silicon to date.
Conclusions:
- The fabricated ZnO/SiO₂/Si SAW devices exhibit ultrahigh-frequency performance.
- Nanoimprint lithography and HSQ planarization are effective for nanoscale transducer fabrication.
- The results represent a significant advancement in ZnO-based SAW device technology on silicon.
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