Raman fingerprint of doping due to metal adsorbates on graphene

The properties of single-layer graphene are strongly affected by metal adsorbates and clusters on graphene. Here, we study the effect of a thin layer of chromium (Cr) and titanium (Ti) metals on chemical vapor deposition (CVD)-grown graphene by using Raman spectroscopy and transport measurements. The Raman spectra and transport measurements show that both Cr and Ti metals affect the structure as well as the electronic properties of the CVD-grown graphene. The shift of peak frequencies, intensities and widths of the Raman bands are analyzed after the deposition of metal films of different thickness on CVD-grown graphene. The shifts in G and 2D peak positions indicate the doping effect of graphene by Cr and Ti metals. While p-type doping was observed for Cr-coated graphene, n-type doping was observed for Ti-coated graphene. The doping effect is also confirmed by measuring the gate voltage dependent resistivity of graphene. We have also found that annealing in Ar atmosphere induces a p-type doping effect on Cr- or Ti-coated CVD-grown graphene.