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Single-photon emission from electrically driven InP quantum dots epitaxially grown on CMOS-compatible Si(001)
M Wiesner1, W-M Schulz, C Kessler
1Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Universität Stuttgart, Allmandring 3, D-70569 Stuttgart, Germany. m.wiesner@ihfg.uni-stuttgart.de
Nanotechnology
|July 31, 2012
Summary
Researchers developed defect-free indium phosphide quantum dots on silicon for photonics. These quantum dots enable efficient, electrically driven single-photon emission in the red spectrum.
Area of Science:
- Semiconductor Physics
- Materials Science
- Photonics
Background:
- Heteroepitaxy of III-V semiconductors on silicon is key for silicon photonics.
- Material property mismatches cause defects, hindering radiative recombination.
Purpose of the Study:
- To realize defect-free indium phosphide quantum dots on silicon.
- To achieve electrically driven single-photon emission for photonic applications.
Main Methods:
- Metal-organic vapour-phase epitaxy (MOVPE) for growing indium phosphide quantum dots.
- Utilizing exactly oriented Si(001) substrates.
Main Results:
- First realization of defect-free indium phosphide quantum dots on Si(001).
- Demonstrated electrically driven single-photon emission in the red spectral region.
Conclusions:
- Indium phosphide quantum dots overcome defect challenges in III-V on silicon heteroepitaxy.
- The emission wavelength matches silicon avalanche photodiodes' peak efficiency, enabling integrated photonic devices.
