Related Experiment Video
Updated: May 19, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Lattice expansion in seamless bilayer graphene constrictions at high bias
Felix Börrnert1, Amelia Barreiro, Daniel Wolf
1IFW Dresden, PF 270116, 01171 Dresden, Germany.
Abstract:
Our understanding of sp(2) carbon nanostructures is still emerging and is important for the development of high performance all carbon devices. For example, in terms of the structural behavior of graphene or bilayer graphene at high bias, little to nothing is known. To this end, we investigated bilayer graphene constrictions with closed edges (seamless) at high bias using in situ atomic resolution transmission electron microscopy. We directly observe a highly localized anomalously large lattice expansion inside the constriction. Both the current density and lattice expansion increase as the bilayer graphene constriction narrows. As the constriction width decreases below 10 nm, shortly before failure, the current density rises to 4 × 10(9) A cm(-2) and the constriction exhibits a lattice expansion with a uniaxial component showing an expansion approaching 5% and an isotropic component showing an expansion exceeding 1%. The origin of the lattice expansion is hard to fully ascribe to thermal expansion. Impact ionization is a process in which charge carriers transfer from bonding states to antibonding states, thus weakening bonds. The altered character of C-C bonds by impact ionization could explain the anomalously large lattice expansion we observe in seamless bilayer graphene constrictions. Moreover, impact ionization might also contribute to the observed anisotropy in the lattice expansion, although strain is probably the predominant factor.
More Related Videos
05:39Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Trends in Lattice Energy: Ion Size and Charge
Bewley Lattice Diagram
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Lattice Energies of Ionic Crystals