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Boron-mediated nanotube morphologies.

Rebecca J Nicholls¹, Zabeada Aslam, Michael C Sarahan

¹Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. rebecca.nicholls@materials.ox.ac.uk

|August 14, 2012

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Doping carbon nanotubes with boron creates varied structures and properties. Controlling heteroatom inclusion is key for consistent nanotube synthesis and applications.

Area of Science:

Materials Science
Nanotechnology
Chemistry

Background:

Heteroatom doping is a key strategy for tuning carbon nanotube (CNT) properties.
Variations in heteroatom concentration lead to diverse morphologies and properties within multiwalled carbon nanotube (MWCNT) samples.
Controlling heteroatom distribution is crucial for predictable CNT performance.

Purpose of the Study:

To investigate the structural and property variations in boron-doped multiwalled carbon nanotubes (B-MWCNTs).
To analyze the spatial distribution and bonding of boron within different B-MWCNT morphologies.
To understand the impact of structural inhomogeneity on the electrical properties and breakdown of B-MWCNTs.

Main Methods:

Scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS) for elemental mapping and bonding analysis.

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Transmission electron microscopy (TEM) for detailed structural characterization of B-MWCNTs.

In situ electrical transport measurements using a Nanofactory() holder to study current-induced breakdown.

Main Results:

TEM revealed three distinct B-MWCNT morphologies: core-shell structures, B-containing cones, and irregular inner channels.
EELS/STEM confirmed boron distribution and bonding within these varied structures.
In situ experiments demonstrated that different B-MWCNT types exhibit unique current-induced breakdown behaviors.

Conclusions:

Boron incorporation during MWCNT synthesis results in significant structural inhomogeneity.
The observed variations in morphology, composition, and properties are linked to synthesis conditions.
Developing controlled heteroatom incorporation techniques is essential for reproducible B-MWCNT fabrication and application.