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Updated: May 19, 2026
11:13
Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Cross-sectional characterization of electrodeposited, monocrystalline Au nanowires in parallel arrangement
Manuel Schneckenburger1, Marion Kelsch, Peter A van Aken
1Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569 Stuttgart, Germany; Department of Biophysical Chemistry, University of Heidelberg, INF 253, 69120 Heidelberg, Germany. schneckenburger@is.mpg.de.
Small (Weinheim an Der Bergstrasse, Germany)
|August 14, 2012
Abstract:
Cross-sections of cylindrically shaped nanowires are fabricated using a focused ion beam technique. They are oriented such that the electron beam direction is parallel to a low-index zone axis for high- resolution imaging. In this configuration the direction of gold nanowire growth can be determined using electron diffraction.
