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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Quantum many-body interactions in digital oxide superlattices.

Eric J Monkman¹, Carolina Adamo, Julia A Mundy

¹Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA.

Nature Materials

|August 21, 2012

Summary

Researchers engineered quantum many-body interactions at oxide interfaces by precisely controlling superlattice structures. This manipulation tuned electronic properties, transitioning materials from metallic to insulating states for novel electronics.

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Area of Science:

Materials Science
Condensed Matter Physics
Solid-State Chemistry

Background:

Controlling electronic properties of interfaces is crucial for technological advancements.
Complex oxides offer unique emergent ground states not found in parent materials.
Quantum many-body interactions, rather than bandgap engineering, can optimize oxide interface properties.

Purpose of the Study:

To investigate the electronic structure of superlattices composed of Mott and band insulators.
To explore the role of quantum many-body interactions in correlated oxide interfaces.
To demonstrate atomic-layer precision control over interface properties.

Main Methods:

Utilized integrated oxide molecular-beam epitaxy for synthesis.
Employed angle-resolved photoemission spectroscopy to study electronic structure.
Fabricated (LaMnO(3))(2n)/(SrMnO(3))(n) superlattices with varying interface separation.

Main Results:

Demonstrated enhancement of quantum many-body interactions with controlled interface separation.
Observed a transition from a ferromagnetic polaronic metal to a pseudogapped insulating ground state.
Showcased atomic-layer precision in engineering superlattice structures.

Conclusions:

Quantum many-body interactions can be effectively engineered at correlated oxide interfaces.
This engineering capability is a prerequisite for developing novel electronic devices.
The study highlights a new paradigm for optimizing electronic and magnetic properties in complex oxides.