Graphene nanomesh as highly sensitive chemiresistor gas sensor
Rajat Kanti Paul1, Sushmee Badhulika, Nuvia M Saucedo
1Department of Mechanical Engineering, University of California, Riverside, California 92521, USA. rpaul003@ucr.edu
Analytical Chemistry
|August 31, 2012
Summary
Researchers developed a graphene nanomesh for improved transistors and gas sensors. This novel material exhibits enhanced electronic properties and superior sensitivity to gases like nitrogen dioxide and ammonia.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics
Background:
- Graphene's zero bandgap limits its use in field-effect transistors (FETs) and sensors.
- Developing semiconducting graphene is crucial for advanced electronic devices.
Purpose of the Study:
- To create a graphene nanomesh (GNM) structure for enhanced FET and gas sensor performance.
- To investigate the effect of controllable nanomesh dimensions on device characteristics.
Main Methods:
- Fabrication of p-type monolayer graphene using ethanol-chemical vapor deposition (CVD).
- Patterning graphene into a nanomesh via nanosphere lithography and reactive ion etching (RIE).
- Characterization of GNM field-effect transistors and chemiresistor gas sensors.
Main Results:
- The GNM exhibited a high drive current and an I(ON)/I(OFF) ratio of approximately 6, surpassing film graphene.
- GNM gas sensors demonstrated high sensitivity to NO(2) (4.32%/ppm) and NH(3) (0.71%/ppm) at room temperature.
- Achieved limits of detection of 15 ppb for NO(2) and 160 ppb for NH(3).
Conclusions:
- Controllable GNM fabrication offers a pathway to significantly improve graphene-based transistors and sensors.
- The nanomesh structure overcomes limitations of planar graphene for electronic applications.
- This work paves the way for next-generation graphene nanoelectronic devices.
