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Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity
Zhenhua Sun1, Zhike Liu, Jinhua Li
1Department of Applied Physics and Materials, Research Centre, The Hong Kong Polytechnic University, Hong Kong, China.
Abstract:
Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10(7) A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots.

