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Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation

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Interplay between crystal phase purity and radial growth in InP nanowires.

P J Poole¹, D Dalacu, X Wu

¹National Research Council Canada, Ottawa, Canada. Philip.Poole@nrc-cnrc.gc.ca

|September 6, 2012

Summary

Controlling crystal growth in indium phosphide (InP) nanowires is key. High stacking fault density promotes radial growth, enabling pure wurtzite InP nanowires with superior optical properties.

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Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

Indium phosphide (InP) nanowires are crucial for advanced electronic and optoelectronic devices.
Controlling crystal phase purity and growth morphology is essential for optimizing nanowire performance.
Stacking faults and polytypism can significantly impact the electronic and optical properties of semiconductor nanowires.

Purpose of the Study:

To investigate the relationship between crystal phase purity and radial growth in InP nanowires.
To understand how growth parameters influence stacking fault density and subsequent nanowire morphology.
To achieve pure wurtzite InP nanowires with enhanced photoluminescence properties.

Main Methods:

Controlled modification of growth rate and V/III ratio during InP nanowire synthesis.
Introduction of regions with varying stacking fault densities (high or low) within wurtzite InP nanowires.
Characterization of crystal structure and optical properties using photoluminescence spectroscopy.

Main Results:

Regions with high stacking fault density were found to promote radial growth in InP nanowires.
Pure wurtzite InP nanowires were successfully grown by optimizing growth conditions.
These pure nanowires exhibited narrow photoluminescence linewidths (3.7 meV at 1.490 meV) at 4.2 K.
No emission related to stacking faults or zincblende insertions was observed in the pure wurtzite InP nanowires.

Conclusions:

Stacking fault density is a critical factor that can be controlled to influence radial growth in InP nanowires.
Optimized growth conditions allow for the fabrication of phase-pure wurtzite InP nanowires.
The resulting pure wurtzite InP nanowires demonstrate excellent optical quality, suitable for high-performance applications.