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High-hole-mobility field-effect transistors based on co-benzobisthiadiazole-quaterthiophene
Jian Fan1, Jonathan D Yuen, Weibin Cui
1Center for Energy Efficient Materials, University of California, Santa Barbara, CA 93106, USA.
Advanced Materials (Deerfield Beach, Fla.)
|September 11, 2012
Abstract:
High-mobility organic thin film transistors based on a benzobisthiadiazole-containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of "edge-on" orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm(2) V(-1) s(-1) .