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Breakdown characteristics of high-side lateral double-diffused metal oxide semiconductor devices
Kunsik Sung1, Kwangsik Kim, Taeyoung Won
1Department of Electrical Engineering, School of IT Engineering Inha University, Incheon, 402-751, Korea.
Journal of Nanoscience and Nanotechnology
|September 13, 2012
Summary
This study optimizes Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOSFET) engineering parameters to achieve a breakdown voltage over 110 V and low on-resistance. Optimized device design shifts impact ionization, enhancing robust breakdown characteristics.
Area of Science:
- Semiconductor device physics
- Power electronics engineering
Background:
- Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistors (LDMOSFETs) are crucial for high-voltage applications.
- Optimizing device design is key to improving performance metrics like breakdown voltage and on-resistance.
Purpose of the Study:
- To investigate and optimize the breakdown characteristics of an LDMOSFET structure.
- To enhance engineering parameters for improved device performance.
Main Methods:
- Fabrication of an LDMOSFET device with optimized parameters.
- Numerical simulations to analyze impact ionization location and rate.
- Characterization of breakdown voltage (BVdss) and specific on-resistance.
Main Results:
- Achieved a breakdown voltage (BVdss) exceeding 110 V.
- Obtained a specific on-resistance as low as 2.20 mΩ·cm².
- Numerical simulations confirmed a shift in maximum impact ionization to the drain side, reducing the ionization rate.
Conclusions:
- Optimized LDMOSFET engineering parameters lead to robust breakdown characteristics.
- The migration of maximum impact ionization location significantly improves device performance.
- The proposed structure offers superior breakdown characteristics compared to conventional designs.
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