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Thin film transistor based on TiOx prepared by DC magnetron sputtering
Sung Mook Chung1, Jae-Heon Shin, Chan-Hwa Hong
1Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Korea.
Journal of Nanoscience and Nanotechnology
|September 13, 2012
Summary
This study demonstrates titanium oxide (TiO2) thin film transistors (TFTs) using DC magnetron sputtering. The resulting n-type channel transparent TFTs show promising performance for opto-electronic applications.
Area of Science:
- Materials Science
- Semiconductor Physics
- Optoelectronics
Background:
- Thin film transistors (TFTs) are crucial for displays and integrated circuits.
- Transparent n-type channel materials are essential for advanced optoelectronic devices.
- Titanium oxide (TiO2) offers potential due to its wide bandgap and transparency.
Purpose of the Study:
- To investigate the properties of TiO2 films prepared by DC magnetron sputtering.
- To fabricate and characterize n-type channel transparent TFTs using TiO2.
- To evaluate the potential of TiO2 TFTs for optoelectronic applications.
Main Methods:
- DC magnetron sputtering was used to deposit TiO2 films from a ceramic target.
- Structural, optical, and electrical properties of the films were analyzed after heat treatment.
- X-ray diffraction (XRD) was employed to determine film structure.
- Optical transmittance and bandgap energy were measured.
- Fabrication and electrical characterization of bottom-gate TFTs were performed.
Main Results:
- TiO2 films exhibited an anatase structure with specific crystal planes after heat treatment.
- The films showed a wide bandgap energy of approximately 3.20 eV.
- High optical transmittance of about 91% at 550 nm was achieved.
- Fabricated TFTs demonstrated an on-off ratio of ~10^4, field-effect mobility of 0.002 cm²/Vs, and threshold voltage of 6 V.
Conclusions:
- DC magnetron sputtered TiO2 films possess suitable properties for n-type channel transparent TFTs.
- The fabricated TiO2 TFTs show viable performance metrics for optoelectronic devices.
- TiO2 is a promising material for developing next-generation transparent optoelectronic devices.
