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Electrical properties of 10-nm-radius n-type gate all around twin Si nanowire field effect transistors

S H Jang1, J T Ryu, J H You

  • 1Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-Dong, Seongdong-Gu, Seoul 133-791, Korea.

Journal of Nanoscience and Nanotechnology
|September 13, 2012
PubMed

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