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Updated: May 18, 2026

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Sn-doped bismuth telluride nanowires with high conductivity
Gang Mi1, Likai Li, Yuanbo Zhang
1Laboratory of Advanced Materials, Department of Chemistry, Fudan University, Shanghai, 200433, People's Republic of China.
Abstract:
Bismuth telluride (Bi(2)Te(3)) nanowires with sub-100 nm diameters were synthesized by Au-Sn co-catalyzed chemical vapor deposition. These Bi(2)Te(3) nanowires were single crystals with a hexagonal lattice. The Sn catalyst played a key role in achieving the one-dimensional nanowire structures, while the absence of Sn resulted in other morphologies such as nanoplates, nanooctahedrons and nanospheres. Raman spectra revealed that compared to the Bi(2)Te(3) bulk materials, the Bi(2)Te(3) nanowires displayed an A(1u) spectral peak, implying the breaking of symmetry. The temperature-dependent electrical measurement indicated that these Sn-doped Bi(2)Te(3) nanowires were metallic, with a high conductivity of 1.6 × 10(5) S m(-1) at 300 K.

