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A Mokashi1, S Li, B Wen

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Area of Science:

  • Condensed matter physics
  • Materials science

Background:

  • Two-dimensional electron systems (2DES) are crucial in understanding fundamental electronic properties.
  • Low-disorder systems provide a cleaner platform to study electron interactions.

Purpose of the Study:

  • Investigate the behavior of thermopower in a low-disorder 2D electron system as electron density decreases.
  • Identify and characterize any phase transitions occurring at low electron densities.

Main Methods:

  • Measured thermopower (S) as a function of electron density (n(s)) in a low-disorder silicon 2D system.
  • Analyzed the temperature dependence of thermopower near the transition point.

Main Results:

  • Observed a sharp, order-of-magnitude increase in thermopower as n(s) decreased.
  • Found thermopower tending to diverge at a critical density n(t), independent of disorder.
  • The critical behavior followed the form (-T/S) ∝ (n(s)-n(t))^x with x=1.0±0.1.

Conclusions:

  • The results strongly suggest an interaction-induced phase transition in the 2D electron system at low densities.
  • This transition is characteristic of strongly interacting electron systems and is disorder-independent.