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Critical behavior of a strongly interacting 2D electron system
1Physics Department, Northeastern University, Boston, Massachusetts 02115, USA.
Abstract:
With decreasing density n(s) the thermopower S of a low-disorder two-dimensional electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude tending to a divergence at a finite disorder-independent density n(t) consistent with the critical form (-T/S) is proportional to (n(s)-n(t))(x) with x=1.0±0.1 (T is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly interacting 2D electron system.
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