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3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry
Published on: April 29, 2020
Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
B Roche1, E Dupont-Ferrier, B Voisin
1SPSMS, UMR-E CEA / UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble, France.
Abstract:
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO2 interface and electric field in the wire show that the values found are consistent with the device geometry.
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