Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors
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Updated: May 18, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
M Birowska1, C Śliwa, J A Majewski
1Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, ul. Hoża 69, PL-00-681 Warszawa, Poland.
Abstract:
It is demonstrated that the nearest-neighbor Mn pair on the GaAs (001) surface has a lower energy for the [110] direction compared to the [110] case. According to the group theory and Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.
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