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Updated: May 18, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
n-type doping of germanium from phosphine: early stages resolved at the atomic level
G Scappucci1, O Warschkow, G Capellini
1School of Physics, University of New South Wales, Sydney, Australia. giordano.scappucci@unsw.edu.au
Abstract:
To understand the atomistic doping process of phosphorus in germanium, we present a combined scanning tunneling microscopy, temperature programed desorption, and density functional theory study of the reactions of phosphine with the Ge(001) surface. Combining experimental and theoretical results, we demonstrate that PH(2) + H with a footprint of one Ge dimer is the only product of room temperature chemisorption. Further dissociation requires thermal activation. At saturation coverage, PH(2) + H species self-assemble into ordered patterns leading to phosphorus coverages of up to 0.5 monolayers.
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