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We studied low-frequency noise in silicon-germanium spin qubits. We found charge noise dominates, originating from individual two-level fluctuators, and used cross-correlations to locate them.

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Area of Science:

  • Quantum computing
  • Condensed matter physics
  • Semiconductor devices

Background:

  • Spin qubits in silicon-germanium are promising for quantum computing.
  • Low-frequency noise is a major obstacle to qubit performance.
  • Understanding noise sources is crucial for device improvement.

Purpose of the Study:

  • Investigate low-frequency noise in Si/Si-Ge spin qubits.
  • Identify the dominant noise source and its characteristics.
  • Develop methods to locate individual noise sources.

Main Methods:

  • Fabrication of spin qubits in isotopically purified Si/Si-Ge.
  • Measurement of energy fluctuations and cross-correlations between qubits.
  • Analysis of noise spectra to identify two-level fluctuators (TLFs).

Main Results:

  • Observed significant cross-correlations in qubit energy fluctuations, indicating charge noise dominance.
  • Found that noise spectra are not power-law distributed, but show contributions from individual TLFs.
  • Demonstrated that noise cross-correlations can spatially localize individual TLFs.

Conclusions:

  • Charge noise from individual TLFs is a primary noise source in Si/Si-Ge spin qubits.
  • Noise cross-correlation measurements provide a powerful tool for characterizing and locating noise sources.
  • This work offers a pathway to mitigate noise and improve qubit coherence.