Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Fermi Level Dynamics

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Fermi Level

Fermi Level

The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...

Spin–Spin Coupling: One-Bond Coupling

Spin–Spin Coupling: One-Bond Coupling

Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...

Spin–Spin Coupling Constant: Overview

Spin–Spin Coupling Constant: Overview

In bromoethane, the three methyl protons are coupled to the two methylene protons that are three bonds away. In accordance with the n+1 rule, the signal from the methyl protons is split into three peaks with 1:2:1 relative intensities. The methylene protons appear as a quartet, with the relative intensities of 1:3:3:1.
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must have a...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Neutrophil to lymphocyte ratio and tumour burden for treatment efficacy stratification in renal cell carcinoma patients receiving nivolumab plus ipilimumab.

ESMO real world data and digital oncology·2026

Same author

Unusual visual and olfactory perceptions during radiotherapy sessions: an investigation of the organs responsible.

Journal of radiation research·2021

Same author

Quantification of Oscillatory Shear Stress from Reciprocating CSF Motion on 4D Flow Imaging.

AJNR. American journal of neuroradiology·2021

Same author

Study of charged particle activation analysis (II): Determination of boron concentration in human blood samples.

Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine·2020

Same author

Pulsed laser deposition with rapid beam deflection by a galvanometer mirror scanner.

The Review of scientific instruments·2019

Same author

Strain induced atomic structure at the Ir-doped LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interface.

Physical chemistry chemical physics : PCCP·2017

Same journal

Erratum: Spectroscopy and Ground-State Transfer of Ultracold Bosonic ^{39}K^{133}Cs Molecules [Phys. Rev. Lett. 135, 203401 (2025)].

Physical review letters·2026

Same journal

Erratum: Lifetime of the ^{2}F_{7/2} Level in Yb^{+} for Spontaneous Emission of Electric Octupole Radiation [Phys. Rev. Lett. 127, 213001 (2021)].

Physical review letters·2026

Same journal

Laser-Plasma Based Seeded Free Electron Laser in the High-Gain Regime.

Physical review letters·2026

Same journal

Parent Hamiltonians for Stabilizer Quantum Many-Body Scars.

Physical review letters·2026

Same journal

Properties of Heavy Cosmic Nuclei Phosphorus, Chlorine, Argon, Potassium, and Calcium: Results from the Alpha Magnetic Spectrometer.

Physical review letters·2026

Same journal

Role of Spin-Isospin Symmetries in Nuclear β-Decays.

Physical review letters·2026

See all related articles

Search research articles

Related Experiment Video

Updated: May 18, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Spin-filter tunnel junction with matched fermi surfaces.

T Harada¹, I Ohkubo, M Lippmaa

¹Department of Applied Chemistry, The University of Tokyo, Hongo, Bunkyo-ku, Japan.

Physical Review Letters

|September 26, 2012

Summary

This summary is machine-generated.

Achieving efficient spin injection into semiconductors is key for spintronics. Matching Fermi-surface shapes in tunnel junctions significantly boosts spin injection efficiency by reducing electron scattering.

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe₁₊_YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

Related Experiment Videos

Last Updated: May 18, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe₁₊_YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

Area of Science:

Materials Science
Condensed Matter Physics
Quantum Mechanics

Background:

Efficient spin-polarized current injection is crucial for semiconductor spintronics.
Spin-filter-type spin injectors face limitations due to spin scattering.

Purpose of the Study:

To investigate the factors limiting spin injection efficiency in semiconductor spintronic devices.
To explore methods for enhancing spin injection efficiency using epitaxial ferromagnetic insulator tunnel junctions.

Main Methods:

Utilizing inelastic electron tunneling spectroscopy to analyze spin injection.
Investigating the role of Fermi-surface matching between current injection source and target electrode materials.

Main Results:

Spin scattering of tunneling electrons limits the efficiency of spin-filter-type spin injectors.
Significant increase in spin injection efficiency observed by matching Fermi-surface shapes.
Epitaxial ferromagnetic insulator tunnel junctions show improved performance.

Conclusions:

Fermi-surface matching is as critical as structural matching for suppressing scattering in spintronic devices.
Optimizing Fermi-surface alignment is a key strategy for developing high-efficiency spintronic devices.