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Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition
Published on: February 27, 2013
Lead-free (Bi0.5Na0.5)TiO3-based thin films by the pulsed laser deposition process
Mehdi Hejazi1, Bahram Jadidian, Ahmad Safari
1Glenn Howatt Electroceramics Laboratory, Department of Materials Science and Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA. safari@rci.rutgers.edu
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
|September 26, 2012
Summary
Optimizing pulsed laser deposition parameters significantly enhances the ferroelectric properties of bismuth sodium potassium titanate-based thin films. Specific conditions yielded superior microstructure, crystallinity, and dielectric performance.
Area of Science:
- Materials Science
- Solid State Physics
- Thin Film Technology
Background:
- Ferroelectric thin films are crucial for advanced electronic devices.
- Bismuth sodium titanate-based materials offer promising piezoelectric and ferroelectric properties.
- Controlling deposition parameters is key to optimizing thin film performance.
Purpose of the Study:
- To investigate the impact of pulsed laser deposition parameters on the properties of 0.88(Bi(0.5)Na(0.5))TiO(3)-0.08(Bi(0.5)K(0.5))TiO(3)-0.04BaTiO(3) thin films.
- To identify optimal deposition conditions for enhanced microstructure, crystallinity, and ferroelectric characteristics.
- To understand the relationship between oxygen pressure and film quality.
Main Methods:
- Pulsed laser deposition (PLD) of ferroelectric thin films.
- Systematic variation of deposition parameters: temperature, repetition rate, oxygen pressure, and laser energy.
- Characterization of film microstructure, crystallinity, dielectric properties, and ferroelectric behavior.
Main Results:
- Optimal ferroelectric properties were achieved at 800°C, 10 Hz, 400 mtorr oxygen pressure, and 1.2 Jcm(-2) laser energy.
- These optimal conditions resulted in a remanent polarization of ~30 μCcm(-2), a dielectric constant of 645 at 1 kHz, and a coercive field of 85 kVcm(-1).
- Increasing oxygen pressure from 200 to 400 mtorr improved crystallinity, microstructure, dielectric constant, and polarization, while suppressing leakage current and dielectric loss.
Conclusions:
- Deposition parameters critically influence the ferroelectric properties of BNT-BKT-BT thin films.
- Optimized PLD conditions, particularly oxygen pressure, are essential for high-performance ferroelectric thin films.
- Reduced oxygen vacancies and improved surface morphology at higher oxygen pressures contribute to enhanced film quality.

