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Controllable growth of triangular hexagonal boron nitride domains on copper foils by an improved low-pressure
Ning Guo1, Jinquan Wei, Lili Fan
1Key Laboratory for Advanced Materials Processing Technology, Ministry of Education of China, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, People's Republic of China.
Abstract:
We demonstrate an improved low-pressure chemical vapor deposition method to fabricate hexagonal boron nitride (h-BN) domains of a few layers (one-four layers) from ammonia borane by adding a small quartz tube to stabilize the gas flow over the copper substrate and reducing the growing rate of h-BN. The h-BN grows freely and spontaneously to form triangular domains on the Cu (100) plane. The triangular domains are prone to be parallel to each other on the copper substrate. The h-BN domains grow by extending in the normal direction of the triangle and form a large thin film by joining together. Both the size and coverage rate on Cu foils are well controlled by tuning the amount of ammonia borane.

