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Updated: May 18, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
The delocalized nature of holes in (Ga, N) cluster-doped ZnO
Muhammad N Huda1, Yanfa Yan, Mowafak M Al-Jassim
1Department of Physics, University of Texas at Arlington, Arlington, TX 76019, USA. huda@uta.edu
Abstract:
A spin-polarized density-functional theory study is presented here, revealing that a single hole state created by (Ga, N) cluster doping in ZnO contains the contributions from all of the N atoms in the cluster. This is in contrast to the situation where N atoms alone are doped into ZnO, and have a highly localized hole state centered around the dopant N atoms. Hence, this study shows that an enhanced delocalized hole state can be obtained if an appropriate electronic environment is provided.
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