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Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...

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Related Experiment Video

Updated: May 18, 2026

Silicon Microchips for Manipulating Cell-cell Interaction
23:21

Silicon Microchips for Manipulating Cell-cell Interaction

Published on: August 30, 2007

A physically transient form of silicon electronics.

Suk-Won Hwang1, Hu Tao, Dae-Hyeong Kim

  • 1Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.

Science (New York, N.Y.)
|September 29, 2012
PubMed
Summary
This summary is machine-generated.

Researchers developed transient silicon electronics that dissolve in the body after use. This breakthrough enables temporary implantable medical devices, like a programmable bacteriocide, offering new possibilities for healthcare.

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Published on: October 6, 2020

Area of Science:

  • Materials Science and Engineering
  • Biomedical Engineering
  • Electrical Engineering

Background:

  • Current silicon electronics are designed for long-term physical invariance.
  • There is a need for implantable devices with controlled lifespans that resorb into the body.
  • This addresses limitations of permanent implants and the need for temporary medical interventions.

Purpose of the Study:

  • To develop transient silicon-based complementary metal oxide semiconductor (CMOS) technology.
  • To enable implantable devices with a defined operational lifespan and subsequent resorption.
  • To integrate sensors, actuators, power, and wireless control for transient systems.

Main Methods:

  • Development of novel materials and manufacturing schemes for transient silicon electronics.
  • Design of device components enabling controlled degradation and resorption.
  • Integration of sensors, actuators, power supply, and wireless control strategies.
  • Theoretical design tools for transient device engineering.

Main Results:

  • Successful demonstration of silicon-based CMOS technology with transient behavior.
  • Integration of essential components for functional implantable devices.
  • Development of a system-level example: a programmable nonantibiotic bacteriocide.

Conclusions:

  • Transient silicon electronics offer a pathway for temporary, resorbable implantable devices.
  • This technology enables new medical applications, such as targeted, temporary interventions.
  • The developed platform supports integrated sensing, actuation, power, and control for transient systems.