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Updated: May 18, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial

R C Jayasinghe1, Y F Lao, A G U Perera

  • 1Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|October 5, 2012
PubMed

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