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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Updated: May 18, 2026

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping
09:32

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

Published on: July 2, 2012

Silicon based plasmonic coupler.

Roney Thomas1, Zoran Ikonic, R W Kelsall

  • 1Institute of Microwave and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom. el07rt@leeds.ac.uk

Optics Express
|October 6, 2012
PubMed
Summary
This summary is machine-generated.

We developed a silicon-based plasmonic coupler for efficient light transfer from optical fibers to nanoscale waveguides. This device achieves high coupling efficiency and low loss, enabling practical silicon plasmonic devices.

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Area of Science:

  • Photonics and Nanotechnology
  • Optoelectronics
  • Materials Science

Background:

  • Plasmonics enables nanoscale control of light-matter interactions.
  • Efficient light coupling into silicon plasmonic waveguides is crucial for device realization.
  • Existing methods often lack efficiency or require complex fabrication.

Purpose of the Study:

  • To investigate and optimize a silicon-based plasmonic coupler for efficient light coupling.
  • To develop a transfer matrix model for analyzing coupler performance.
  • To explore the application of the coupler as a beam splitter.

Main Methods:

  • Finite element simulations were used to optimize coupler structural parameters.
  • A transfer matrix model was developed to analyze transmission performance.
  • Simulations predicted coupling efficiency and insertion loss.

Main Results:

  • A maximum coupling efficiency of 72% was predicted for light coupling into a 20 nm slit.
  • An insertion loss of ≈ 2.0 dB was predicted for coupling into a 300 nm SOI waveguide.
  • The coupler demonstrated potential as a splitter with ≈ 37% efficiency per waveguide.

Conclusions:

  • The optimized silicon-based plasmonic coupler offers efficient light confinement and coupling.
  • The developed transfer matrix model aids in performance analysis.
  • The coupler shows promise for integrated silicon photonics and optical signal splitting.