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Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies

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Published on: December 18, 2015

Mid-infrared group IV nanowire laser.

Youngmin Kim¹, Simone Assali², Junyu Ge³

¹School of Materials Science and Engineering, Kookmin University, 77 Jeongneung-ro, Seongbuk-gu, Seoul 02707, Republic of Korea.

Science Advances

|May 16, 2025

Summary

Researchers achieved lasing above 2 μm from a single Germanium-Tin (GeSn) nanowire. This breakthrough enables cost-effective, Si-compatible mid-infrared lasers for integrated photonics.

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Area of Science:

Materials Science
Photonics
Nanotechnology

Background:

Semiconductor nanowires are key for ultracompact lasers in integrated photonics.
Integrating III-V and II-VI nanowire lasers with Si photonics is challenging.
Group IV GeSn nanowires offer Si-compatible, cost-effective gain media for mid-infrared lasers.

Purpose of the Study:

To demonstrate lasing from a single GeSn nanowire above 2 μm.
To overcome integration challenges in Si photonics platforms.
To enable all-group IV mid-infrared photonic-integrated circuits.

Main Methods:

Experimental observation of lasing from a single bottom-up grown GeSn nanowire.
Utilizing strain engineering to enhance material gain.
Employing optimized cavity designs to minimize optical losses.

Main Results:

Successful demonstration of lasing above 2 μm from a single GeSn nanowire.
Achieved amplified material gain exceeding minimized optical losses.
Observed single-mode lasing with an ultralow threshold of ~5.3 kW/cm².

Conclusions:

This work demonstrates the potential of GeSn nanowires for Si-compatible lasers.
The findings pave the way for mid-infrared photonic-integrated circuits.
Enables on-chip classical and quantum applications using group IV materials.