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Silicon nanowire arrays with enhanced optical properties
M Khorasaninejad1, M A Swillam, K Pillai
1Department of Electrical and Computer Engineering and Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada.
Optics Letters
|October 18, 2012
Summary
Vertical silicon nanowires significantly boost light emission and nonlinear optical properties. This research enhances silicon for advanced photonic and electronic devices.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Silicon photonics is crucial for integrated circuits.
- Bulk silicon has limitations in light emission and nonlinear optical response.
- Nanostructuring offers a route to overcome these limitations.
Purpose of the Study:
- To fabricate vertical silicon nanowire arrays.
- To investigate the photoluminescence (PL) properties of these arrays.
- To evaluate the second-order nonlinear optical response of the nanowires.
Main Methods:
- Fabrication of vertical silicon nanowire arrays.
- Photoluminescence spectroscopy for emission analysis.
- Second-harmonic generation and rotational anisotropic measurements for nonlinear optics.
Main Results:
- Photoluminescence emission increased by a factor of 50 compared to bulk silicon.
- Second-order nonlinearity enhanced by at least a factor of 80 for specific polarization.
- Demonstrated second-harmonic generation and rotational anisotropy.
Conclusions:
- Vertical silicon nanowires exhibit significantly enhanced optical properties.
- These findings pave the way for silicon-based nonlinear and active photonic devices.
- Enables advanced applications on a silicon platform.
