Exchange field-mediated magnetoresistance in the correlated insulator phase of Be films

We present a study of the proximity effect between a ferromagnet and a paramagnetic metal of varying disorder. Thin beryllium films are deposited onto a 5 nm thick layer of the ferromagnetic insulator EuS. This bilayer arrangement induces an exchange field, H(ex), of a few tesla in low-resistance Be films with sheet resistance R≪R(Q), where R(Q)=h/e2 is the quantum resistance. We show that H(ex) survives in very high-resistance films and, in fact, appears to be relatively insensitive to the Be disorder. We exploit this fact to produce a giant low-field magnetoresistance in the correlated-insulator phase of Be films with R≫R(Q).