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A single-device universal logic gate based on a magnetically enhanced memristor
Mirko Prezioso1, Alberto Riminucci, Patrizio Graziosi
1Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy. m.prezioso@bo.ismn.cnr.it
Abstract:
Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.
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